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  • 专利标题:   Formation of multilayer structure, involves epitaxially depositing graphene layer on layer comprising cobalt that is in contact with dielectric layer and has semiconductor wafer with front wafer surface contacting dielectric layer.
  • 专利号:   WO2017058928-A1, TW201730385-A, EP3356582-A1, US2018315599-A1, US2019139762-A1
  • 发明人:   BERRY V, BEHURA S, NGUYEN P, SEACRIST M R
  • 专利权人:   SUNEDISON SEMICONDUCTOR LTD, UNIV ILLINOIS FOUND, SUNEDISON SEMICONDUCTOR LTD, UNIV ILLINOIS FOUND, SUNEDISON SEMICONDUCTOR LTD, UNIV ILLINOIS FOUND, GLOBALWAFERS CO LTD
  • 国际专利分类:   C30B025/18, C30B029/02, H01L021/02, H01L029/16, C01B032/184
  • 专利详细信息:   WO2017058928-A1 06 Apr 2017 C30B-025/18 201727 Pages: 31 English
  • 申请详细信息:   WO2017058928-A1 WOUS054202 28 Sep 2016
  • 优先权号:   US235800P, US15764370, US234711

▎ 摘　　要

NOVELTY - Formation of multilayer structure involves epitaxially depositing a graphene layer (40) on a layer (30) comprising cobalt. The layer comprising cobalt is in contact with a dielectric layer (20) that is in contact with a front wafer surface of a semiconductor wafer (10). USE - Formation of multilayer structure (claimed). ADVANTAGE - The method provides multilayer structure with high-quality graphene layers. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view explaining the formation of the multilayer structure. Semiconductor substrate (10) Dielectric layer (20) Layer comprising cobalt (30) Single-layer graphene (40)