• 专利标题:   Growing patterning graphene film on hydroxyapatite surface by depositing copper on hydroxyapatite ceramic surface, and feeding ethyne, hydrogen and argon, and etching copper layer to make graphene film.
  • 专利号:   CN102534545-A, CN102534545-B
  • 发明人:   CHANG J, LIU J
  • 专利权人:   UNIV SHANGHAI
  • 国际专利分类:   A61L027/40, C23C016/01, C23C016/26
  • 专利详细信息:   CN102534545-A 04 Jul 2012 C23C-016/26 201307 Pages: 5 Chinese
  • 申请详细信息:   CN102534545-A CN10040090 20 Mar 2012
  • 优先权号:   CN10040090

▎ 摘  要

NOVELTY - A patterning graphene film is grown on hydroxyapatite surface by depositing a 1 mu m thick copper on the surface of hydroxyapatite ceramic surface through an electron beam evaporation; feeding ethyne, hydrogen and argon into the Aixtron Black Magic deposition system of reaction chamber, reacting for 5 minutes at 900 degrees C, and growing graphene on hydroxyapatite surface deposited with copper through chemical vapor deposition; and etching the copper layer to make graphene film covering on the surface of the material after cooling treatment using 30 mass% iron trichlorides for 10 minutes. USE - Method for growing patterning graphene film on hydroxyapatite surface (claimed). ADVANTAGE - The method can regulate and control behavior and density of cell, and provides new material for promoting or assisting bone growth combining with the capability of promoting bone growth of hydroxyapatite.