• 专利标题:   Graphene cold wall growth device, has power supply whose two poles pass through two through holes of reaction chamber, where two poles of power supply are connected with upper electrode plate and lower electrode plate.
  • 专利号:   CN215161040-U
  • 发明人:   CHEN Z, JI N, SHEN C, XU S, ZHANG J
  • 专利权人:   UNIV PEKING, BEIJING GRAPHENE INST
  • 国际专利分类:   C01B032/186, C23C016/26, C23C016/517
  • 专利详细信息:   CN215161040-U 14 Dec 2021 C01B-032/186 202217 Chinese
  • 申请详细信息:   CN215161040-U CN21673706 22 Jul 2021
  • 优先权号:   CN21673706

▎ 摘  要

NOVELTY - The invention claims a graphene cold wall growth device, relating to the technical field of graphene. The graphene cold wall growth device comprises: a reaction chamber, the reaction chamber is provided with two through holes; bracket, the bracket is composed of two side plates and a base, the bracket is placed in the reaction chamber; an upper electrode plate, the upper electrode plate is placed on the bracket; a lower electrode plate, the lower electrode plate is placed on the bracket; a radio frequency coil, the radio frequency coil is connected with the reaction chamber; vortex coil, the vortex coil is connected with the reaction chamber; a power supply, the respectively of the two poles of the power supply passes through two through holes of the reaction chamber, the two respectively of the power supply are connected with the upper electrode plate and the lower electrode plate. The graphene cold wall growth device claimed by the invention is heated by introducing electric field and vortex to obtain the vertical graphene completely vertical to the substrate, the device has simple structure, fast heating speed, high heat efficiency and low cost.