• 专利标题:   Method for processing substrate used in manufacture of e.g. electronic devices, involves forming graphene layer from specific layer on surface of carrier by temperature treatment.
  • 专利号:   DE102015117176-A1, US2016104640-A1, CN105513946-A, US9627196-B2, CN105513946-B
  • 发明人:   PRUEGL K, RUHL G, RUHR G, PRUGER K
  • 专利权人:   INFINEON TECHNOLOGIES AG, INFINEON TECHNOLOGIES AG
  • 国际专利分类:   H01L021/285, H01L021/324, H01L021/02, H01L021/768, C01B031/04, H01L021/44, H01L029/16
  • 专利详细信息:   DE102015117176-A1 14 Apr 2016 H01L-021/285 201627 Pages: 41 German
  • 申请详细信息:   DE102015117176-A1 DE10117176 08 Oct 2015
  • 优先权号:   US511199

▎ 摘  要

NOVELTY - The method (100) involves depositing a metal from a first source of carbon and from a second source on a surface of a support to form (110) a first layer, and forming (120) a second layer over the first layer, in which the second layer has a diffusion barrier material. The solubility of carbon in the diffusion barrier material is less than in the metal. A graphene layer is formed from the first layer on the surface of the carrier by temperature treatment (130). USE - Method for processing substrate used in manufacture of electronic devices and integrated circuits in semiconductor industry. ADVANTAGE - The graph with a layer of carbon atoms in a hexagonal arrangement has improved electronic properties which enable production of transistor having improved response and/or switching behavior. The two-dimensional materials for microelectronics are important for developing various types of sensors, transistors and the like, which are challenging to incorporate these two-dimensional materials in a microchip to emulate the silicon technology. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic flow diagram of a method for processing a substrate. (Drawing includes non-English language text) Method for processing substrate (100) Forming first layer (110) Forming second layer (120) Temperature treatment (130)