▎ 摘　　要

NOVELTY - A method for making a field effect transistor includes the following steps: providing a graphene nanoribbon composite structure including a substrate and a plurality of graphene nanoribbons, wherein the substrate includes a plurality of protrusions spaced apart from each other, the plurality of graphene nanoribbons are spaced on the substrate, and one graphene nanoribbon is located between two adjacent protrusions; and providing an interdigital electrode on the graphene nanoribbon composite structure, wherein the interdigital electrode covers the plurality of protrusions and is electrically connected to the plurality of graphene nanoribbons.