▎ 摘　　要

NOVELTY - The apparatus has a chamber that is configured to provide a plasma processing space. A power supply is provided to supply high-frequency power for generating plasma in the plasma processing space. A silicon-containing material is arranged inside the chamber, and provided with a first surface (120a) facing the plasma processing space. A conductive material is provided with a conductive film (121) formed on a second surface (120b) not facing the plasma processing space of a silicon element (120). USE - Plasma processing apparatus such as capacitive coupling type plasma processing device. ADVANTAGE - The loss of high frequency power in the silicon element facing the plasma processing space is reduced. The formation process of the conductive film is simplified while suppressing the occurrence of abnormal discharge. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the plasma processing apparatus. 14Electrode plate 104Baffle plate 120Silicon element 120a,120bSurface 121Conductive film