▎ 摘　　要

NOVELTY - Semiconductor wafer bearing structure comprises a patterned heat conducting part fixed on a bearing plate. A part of patterned heat conducting part is different from heat conducting coefficient of bearing plate. The patterned heat conducting part comprises inner and outer heat conducting parts. The outer heat conducting part is annular. The cross-sectional shape of the patterned heat conducting part comprises a rectangle, a trapezoid, an arc, and/or a triangle. The structure further comprises a protective layer. The material of patterned heat conducting part and protective layer comprises silicon carbide, tantalum carbide, graphite, ceramic, quartz, graphene, and/or diamond-shaped film. The material of the bearing plate comprises graphite, and/or silicon carbide. USE - The bearing structure is useful in metal organic chemical vapor deposition device (claimed). DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a metal organic chemical vapor deposition device. DESCRIPTION OF DRAWING(S) - The drawing shows a top view of the semiconductor wafer bearing structure.