• 专利标题:   Method for manufacturing graphene, involves forming graphene layer on graphene growth substrate, and forming pattern for formation of graphene on graphene growth substrate.
  • 专利号:   WO2018212365-A1, CN109257931-A
  • 发明人:   KIM H K, KIM H
  • 专利权人:   KOREA ELECTRONICS TECHNOLOGY INST
  • 国际专利分类:   C01B032/182, C23C016/01, C23C016/02, C23C016/26
  • 专利详细信息:   WO2018212365-A1 22 Nov 2018 C01B-032/182 201880 Pages: 20
  • 申请详细信息:   WO2018212365-A1 WOKR005005 15 May 2017
  • 优先权号:   CN80030204, WOKR005005, CN80030204

▎ 摘  要

NOVELTY - The method involves forming a graphene layer (120) on a graphene growth substrate. A pattern for formation of graphene (200) is formed on the graphene growth substrate. The graphene growth substrate comprises silicon, nickel, cobalt, iron, platinum, gold, aluminum, chromium, copper, magnesium, manganese, molybdenum, rhodium, tantalum, titanium, tungsten, brass, bronze, white copper, stainless steel and/or germanium. The light is irradiated onto the graphene growth substrate. The light irradiation is performed by irradiating of intensified pulsed light and laser light. USE - Method for manufacturing graphene. ADVANTAGE - The graphene having high quality and excellent characteristics is obtained by controlling the domain size and shape of graphene. The deformity of the graphene is minimized. DETAILED DESCRIPTION - The graphene forming pattern is formed as a honeycomb pattern. The graphene layer is provided with a domain having the same shape as the graphene pattern. INDEPENDENT CLAIMS are included for the following: (1) a graphene produced by graphene manufacturing method, has a domain of a honeycomb pattern formed by repeating a hexagonal pattern; (2) a graphene formation substrate has a graphene domain for the control pattern for controlling the graphene domain having the honeycomb shape in which the hexagonal pattern is formed in the surface; and (3) a substrate manufacturing method for graphene formation, involves irradiating the light in the upper portion of the mask, and positioning the mask corresponding to the pattern for the graphene formation at the upper portion of the graphene growth substrate. The laser light and intensified pulsed light is irradiated. The intensified pulsed light irradiation is performed using a flash lamp or a xenon lamp, and the irradiation of the laser light is performed using carbon dioxide laser, argon laser, or excimer laser. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view illustrating the process for manufacturing graphene. Graphene layer (120) Graphene (200)