▎ 摘　　要

NOVELTY - Preparing a locally enhanced tungsten disulfide/reduced graphene oxide material by oxygen plasma comprises (i) dissolving the tungsten source and the thiourea in an specific amount of deionized water and stirring to uniformly mix the solution, (ii) adding an specific amount of a graphene oxide (GO) aqueous solution to the solution, stirring the mixed solution and uniformly dispersing the ultrasonic, (iii) adding to the lining of the reaction vessel, (iv) dispersing nanosheet obtained in step (iii) onto a silicon substrate with an oxide layer, spin coating a layer of photoresist and etching it at a specific position on the WS2/RGO nanosheet by electron beam etching a rectangular window is formed to partially expose the nanosheet, (v) treating product with an oxygen plasma, and removing surface photoresist by a solvent. USE - The method is useful for preparing a locally enhanced tungsten disulfide/reduced graphene oxide material by oxygen plasma. DETAILED DESCRIPTION - Preparing a locally enhanced tungsten disulfide/reduced graphene oxide material by oxygen plasma comprises (i) dissolving the tungsten source and the thiourea in an specific amount of deionized water at a molar ratio of 1:5-1:10 and stirring to uniformly mix the solution, (ii) adding an specific amount of a graphene oxide (GO) aqueous solution to the solution obtained in the step (i), stirring the mixed solution and uniformly dispersing the ultrasonic, (iii) adding to the lining of the reaction vessel, where the filling rate is 60-80%, and the temperature is kept at 200 degrees C for 12-24 hours, naturally cooling, adding deionized water and washing the sample with water ethanol and drying at low temperature to obtain tungsten disulfide/reduced graphene oxide nanosheets, (iv) dispersing nanosheet obtained in step (iii) onto a silicon substrate with an oxide layer, spin coating a layer of photoresist and etching it at a specific position on the WS2/RGO nanosheet by electron beam etching a rectangular window is formed to partially expose the nanosheet, (v) treating product with an oxygen plasma, and removing surface photoresist by a solvent. INDEPENDENT CLAIMs are also included for: (1) the oxygen plasma locally enhanced tungsten disulfide/reduced graphene oxide material is prepared by ther above method; (2) electrocatalytic hydrogen production device, comprising the oxygen plasma localized WS2/RGO material, where the oxygen plasma locally enhanced WS2/RGO material consists of two metal microelectrodes arranged in parallel, the material of the microelectrode is 5 nm Cr, 50-150 nm Au, polymethyl methacrylate as an insulating layer, and a thickness of 2-4 mu m, the etched rectangular window is parallel to the metal microelectrode, so that the nanosheet is treated portion is exposed and the metal microelectrodes are all covered by the insulating layer; and (3) constructing an electrocatalytic hydrogen production device, comprising (a) locally oxidizing the WS2/RGO material as a channel material, the oxide layer as a dielectric layer, and the channel material, metal microelectrodes are fabricated at both ends, (b) spin coating insulating layer and reinforcing the oxygen plasma obtained between the metal microelectrodes locally the portion of the WS2/RGO material treated by the oxygen plasma to etch a rectangular window to build a three-electrode and subjecting test system to an electrocatalytic hydrogen evolution test.