▎ 摘　　要

NOVELTY - Preparing graphene/molybdenum disulfide heterojunction semiconductor film comprises cleaning the copper foil substrate and the silicon dioxide/silicon substrate respectively to grow graphene thin film on the processed copper foil substrates, transferring the finished growth of the graphene film from the processed metal foil substrate to the processed silicon dioxide or silicon substrate, to obtain the silicone/silica substrate of the deposition of the film graphene, growing a moly bdenum-disulfide film on a silicon dioxide / silicon substrate of a graphene film, and depositing the graphene thin membrane on the silicon oxide / silicon dioxide substrate to obtain a graphene /moly benzenesulfide hybrid semiconductor membrane. USE - Preparation method of graphene/molybdenum disulfide heterojunction semiconductor film used in chemical technical field. ADVANTAGE - The graphene/molybdenum disulfide heterojunction semiconductor film has large area and high quality. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a kind of graphene/molybdenum disulfide heterojunction semiconductor film. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of a graphene preparation method/molybdenum disulfide heterojunction semiconductor film provided. (Drawing includes non-English language text).