• 专利标题:   Impure gas adsorption device useful for graphene chemical vapor deposition apparatus, comprises air flow channel, mixed gas inlet connected with one end of flow channel, multiple semiconductor refrigeration sheets and purified gas outlet.
  • 专利号:   CN203264325-U
  • 发明人:   LIU C, LIAN R
  • 专利权人:   XIAMEN XICHENG NEW MATERIAL TECHNOLOGY
  • 国际专利分类:   B01D008/00, C23C016/26, C23C016/44
  • 专利详细信息:   CN203264325-U 06 Nov 2013 B01D-008/00 201405 Pages: 5 Chinese
  • 申请详细信息:   CN203264325-U CN20211860 24 Apr 2013
  • 优先权号:   CN20211860

▎ 摘  要

NOVELTY - This utility model claims a kind of used for chemical gas phase deposition apparatus graphene impurity gas adsorbing device, comprising a flow channel, the one end of a mixed gas inlet of a graphene chemical vapour deposition, is equipped with several groups of semiconductor refrigeration sheet outer side of the air flow channel, a refrigerating sheet through a connection to form electric low temperature gas cold trap and absorb the impurity gas, the air flow passage and the other end is purified gas outlet. This utility model is a semiconductor refrigeration device, a method of low temperature adsorption, to remove the impurity gas mixed in the gas source, the structure is simple, it is convenient to use, and it is easy to maintain.