▎ 摘　　要

NOVELTY - This new utility model claims a kind of controlling one graphite alkene crystal nucleus grow and carrier. With carrier comprises upper cover, box and used for growing graphite alkene and the flat metal substrate of upper cover is opened with a small hole, upper cover and box are more than 1000 degree centigrade of graphite, quartz, silicon nitride or carbonizing silicon equal melting point bear high temperature material, the base metal substrate placed box at back of metal substrate and cover of box in the upper cover lower surface distance equal to less than 2 mm. The carrier with the use method comprises metal substrate pre-processing, metal substrate annealing, graphite alkene as core, cooling and oxidation process. The utility model has new nucleate stage carrier in opening size for the reaction gas and to limit flow function, can control the graphene in the nucleate area and nucleate density of copper foil, through hole and size of each growth parameter control decrease graphite alkene and nucleate density to realize in the large single crystal graphite alkene, through CVD tubular furnace controlling gas proportion and pressure using graphite single crystal or multi-crystal area.