▎ 摘　　要

NOVELTY - Method for preparing single-layer large-area graphene, involves (a) growing layer of hexagonal boron nitride as a dielectric layer on two catalytic metal layers using chemical vapor deposition method under same condition to obtain two metal-hexagonal boron nitride portions, (b) turning over one of metal-hexagonal boron nitride portions, and maintaining the hexagonal boron nitride surface vertically relative to other metal-hexagonal boron nitride portion for tight stacking, (c) using gaseous carbon source as precursor in reaction furnace, introducing gaseous catalyst, maintaining the hexagonal boron nitride overlapping interface parallel to air flow direction, and catalytically generating graphene between two hexagonal boron nitride layers using plasma enhanced chemical vapor deposition method, and (d) generating graphene with sufficient area, stopping the reaction, and peeling off the two hexagonal boron nitride layers in close contact to form single-layer large-area graphene. USE - Method for preparing single-layer large-area graphene. ADVANTAGE - The method adopts the low lattice mismatch between h-BN and graphene, reduces the experimental temperature, improves the reaction rate using plasma-enhanced chemical vapor deposition, deposits high-quality single-layer graphene on dielectric substrate, realizes the preparation of single-layer large-area graphene, solves the problems of uneven number of layers, slow reaction rate and high temperature in existing preparation process, and lays excellent foundation for large-scale application of graphene.