▎ 摘　　要

NOVELTY - Manufacture of n-doped graphene (410) involves preparing graphene, and ammonium fluoride, exposing graphene to ammonium fluoride leading to formation of fluorine layer on a portion or all of the upper and lower surfaces of graphene layer. The ammonium ions are physisorbed on a portion or all of the upper and lower surfaces of the graphene layer or defects between carbon atoms of the graphene layer. USE - Manufacture of n-doped graphene used for manufacturing electrical components (all claimed) e.g. field effect transistor. ADVANTAGE - The method enables manufacture of n-doped graphene having improved charge mobility. The electronic component having improved operating speed or frequency and suppressing deterioration of graphene properties is provided. The protective film on the surface of graphene enables the doping effect of graphene to be maintained for a long period of time. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of electrical component. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of back-gate transistor using graphene and its doping process. Back-gate transistor (400) Graphene (410) Silicone-nitride layer (440) Doped silicone layer (450) Aluminum oxide layer (460)