▎ 摘　　要

NOVELTY - Preparing single-layer single crystal graphene comprises (1) cutting copper foil to right size with scissors, placing into dilute hydrochloric acid for ultrasonic cleaning, transferring to an acetone solution for ultrasonic cleaning, drying with nitrogen after the end of the cleaning, (2) placing copper foil in tubular furnace quartz tube, introducing argon, raising the temperature to 1000-1060 degrees C in an argon atmosphere, and annealing at this temperature, (3) evacuating the tube furnace to 10 Pa after the copper foil is annealed, introducing methane and hydrogen, adjusting the gas outlet rate of the chemical vapor deposition system to stabilize the system pressure at 0.54 KPa, growing for 10 minutes under the pressure, and maintaining tube furnace temperature during process at 1000-1060 degrees C, and (4) opening the tube furnace, cooling down quickly, and passing 300-350 sccm argon and 4 sccm hydrogen to grow single-layer single crystal graphene. USE - The method is useful for preparing single-layer single crystal graphene. ADVANTAGE - The method: is simple, controllable, and suitable for industrial production.