▎ 摘　　要

NOVELTY - Graphene doping method involves preparing a mixed etching solution by mixing 4-hydroxybenzenesulfonic acid in an etchant, etching a metal catalyst layer by immersing the metal catalyst layer containing graphene in the mixed etching solution, and doping graphene with 4-hydroxybenzenesulfonic acid. USE - Method for doping graphene in manufacture of doped graphene (all claimed). ADVANTAGE - The method enables efficient manufacture of doped graphene with excellent sheet resistance. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) doped graphene; and (2) manufacture of doped graphene, which involves forming graphene on the metal catalyst layer, preparing a mixed etching solution by mixing 4-hydroxybenzenesulfonic acid in the etchant, etching the metal catalyst layer by immersing the metal catalyst layer with the graphene in the mixed etching solution, and doping the graphene with 4-hydroxybenzenesulfonic acid.