• 专利标题:   Method for doping graphene in manufacture of doped graphene, involves etching metal catalyst layer containing graphene using mixed solution of 4-hydroxybenzenesulfonic acid and etchant, and doping graphene with 4-hydroxybenzenesulfonic acid.
  • 专利号:   KR2018036262-A
  • 发明人:   YOUNG D K
  • 专利权人:   GAON INT
  • 国际专利分类:   C01B031/04, C04B035/52, C04B035/622, C04B041/53, C04B041/82, C04B041/91
  • 专利详细信息:   KR2018036262-A 09 Apr 2018 C01B-031/04 201831 Pages: 10
  • 申请详细信息:   KR2018036262-A KR126624 30 Sep 2016
  • 优先权号:   KR126624

▎ 摘  要

NOVELTY - Graphene doping method involves preparing a mixed etching solution by mixing 4-hydroxybenzenesulfonic acid in an etchant, etching a metal catalyst layer by immersing the metal catalyst layer containing graphene in the mixed etching solution, and doping graphene with 4-hydroxybenzenesulfonic acid. USE - Method for doping graphene in manufacture of doped graphene (all claimed). ADVANTAGE - The method enables efficient manufacture of doped graphene with excellent sheet resistance. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) doped graphene; and (2) manufacture of doped graphene, which involves forming graphene on the metal catalyst layer, preparing a mixed etching solution by mixing 4-hydroxybenzenesulfonic acid in the etchant, etching the metal catalyst layer by immersing the metal catalyst layer with the graphene in the mixed etching solution, and doping the graphene with 4-hydroxybenzenesulfonic acid.