• 专利标题:   Forming graphene layer for improving graphene deposition, involves exposing a substrate surface comprising a dielectric material to a microwave surface-wave plasma comprising hydrocarbon and hydrogen radicals to form graphene layer.
  • 专利号:   US2020105525-A1
  • 发明人:   ZHOU J, CHEN E, LIANG Q, YING C C, NEMANI S D, YIEH E Y
  • 专利权人:   APPLIED MATERIALS INC
  • 国际专利分类:   C23C016/02, C23C016/26, H01L021/02
  • 专利详细信息:   US2020105525-A1 02 Apr 2020 H01L-021/02 202033 Pages: 7 English
  • 申请详细信息:   US2020105525-A1 US585929 27 Sep 2019
  • 优先权号:   US737868P, US585929

▎ 摘  要

NOVELTY - Forming graphene layer involves exposing a substrate surface comprising a dielectric material to a microwave surface-wave plasma comprising hydrocarbon and hydrogen radicals to form a graphene layer. USE - Method for forming graphene layer for improving graphene deposition. ADVANTAGE - The method enables to form graphene layer at lower temperature and formed graphene layers has a predetermined thickness in a shorter period of time with lower resistance, and provides plasma which has high radical density but low energy. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method of improving graphene deposition, involves exposing a substrate surface to an oxygenating plasma to improve one or more substrate surface quality or deposition parameter.