▎ 摘　　要

NOVELTY - The method involves fixing (S10) the substrate on the substrate holder and placing in a vacuum chamber, and performing vacuum processing on the vacuum chamber. The argon gas is introduced (S20) into the vacuum chamber, when the vacuum degree in the vacuum chamber is lower than the preset threshold. The argon gas is ionized (S30) under the coupling action of the magnetic field and the microwave. A carbon source gas is poured (S40) into the vacuum chamber to generate carbon plasma under the activation of argon plasma. The substrate bias is adjusted (S50) to a positive bias, electrons are attracted in the carbon plasma to the surface of the substrate to assist growth, electron irradiation is formed, and the carbon plasma on the substrate is deposited to generate a graphene carbon film. USE - Method for preparing graphene film by chemical vapor deposition electron irradiation. ADVANTAGE - The method provides a low pressure environment and does not need to heat the substrate of the graphene carbon film preparation method. The carbon source gas is ionized fully, forming high density plasma, and by the auxiliary of electron irradiation can reduce the growth of the substrate temperature, so as to realize the substrate to grow the graphene film under the condition without heating the substrate. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating the method for preparing graphene film. (Drawing includes non-English language text) Step for fixing the substrate on the substrate holder and placing in a vacuum chamber, and performing vacuum processing on the vacuum chamber (S10) Step for introducing argon gas into the vacuum chamber (S20) Step for ionizing argon gas (S30) Step for pouring a carbon source gas into the vacuum chamber to generate carbon plasma under the activation of argon plasma (S40) Step for adjusting the substrate bias to a positive bias, attracting electrons in the carbon plasma to the surface of the substrate to assist growth, forming electron irradiation, and depositing the carbon plasma on the substrate to generate a graphene carbon film (S50)