▎ 摘　　要

NOVELTY - The modulator has a substrate (101), an isolation layer (102) and a light modulation structure (100) are arranged in sequence. The material of the isolation layer is silicon oxide. The material of a ridge waveguide (103) is silicon nitride. The electrode structure includes a first metal layer (109) located on both sides of a ridge waveguide base (104). The first metal layer on one side of the ridge waveguide base is located on the upper graphene layer and is in contact with the upper graphene layer. The first metal layer on the other side of the ridge waveguide base is located on and in contact with the lower graphene layer. The material of the first metal layer is titanium, nickel, cobalt and palladium. The material of a second metal layer (110) is gold, silver, platinum, copper and aluminum. USE - Embedded graphene optical modulator based on silicon nitride ridge waveguide. ADVANTAGE - The graphene layer is located on the upper plane of the base of the ridge waveguide, which effectively prevents the fracture of the graphene layer from affecting performance. The adopted materials and processing methods are fully compatible with the bulk silicon complementary metal oxide semiconductor (CMOS) process, so that the light modulator is integrated on the integrated circuit chip through a later process expansion method. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for manufacturing an embedded graphene optical modulator based on a silicon nitride ridge waveguide. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of the cross-section and top view of the light modulator. Light modulation structure (100) Substrate (101) Isolation layer (102) Ridge waveguide (103) Ridge waveguide base (104) First metal layer (109) Second metal layer (110)