▎ 摘　　要

NOVELTY - A high k dielectric growing method involves providing graphene thin film to grow high-k dielectric and using zinc oxide seed layer with thickness of 1-3 nm to prepare zinc oxide thin film on graphene film by using electron beam vacuum evaporation with auxiliary plasma assistance and magnetron sputtering technology. The graphene film with the layer is processed in oxygen environment at 100-200 degrees C for 30-60 minutes to oxidize the layer to form buffer layer. The obtained film is processed by using an atomic layer deposition process at 100-200 degrees C. USE - Method for growing high k dielectric on graphene for use in nanoscale preparation of a planar device for use as graphene-based electronic device. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating a method for high k dielectric on graphene.'(Drawing includes non-English language text)'