▎ 摘　　要

NOVELTY - Producing monocrystalline graphene, comprises (i) producing base material containing metal thin film at 900-1200 degrees C using a high temperature generator, and (ii) supplying a carbon source, and contacting the high temperature part with the carbon source. USE - The method is useful for producing monocrystalline graphene (claimed). ADVANTAGE - The method improves productivity and is economical. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for monocrystalline graphene produced by the above method.