▎ 摘　　要

NOVELTY - Preparing graphene-doped fully flexible magneto-electric heterojunction comprises using carbon dioxide infrared laser carbonization flexible substrate, to form graphene film on the surface of the flexible substrate, dispersing 70/30 or 80/20 mol% of P (vinylidene fluoride-TrFE) polymer powder in the dimethyl formamide to obtain the polyvinylidene fluoride solution, dropping the polyvinylidene fluoride solution to the surface of the graphene film, pre-baking the obtained P (vinylidene fluoride-TrFE) /graphene/PI sample, annealing at 135 degrees C to form beta phase P (vinylidene fluoride-TrFE), using metal cobalt iron boron as target material, using magnetron sputtering to deposit on the surface of the P (vinylidene fluoride-TrFE) ferroelectric layer, forming a metal layer and taking tantalum metal as target material, using magnetron sputtering method to deposit on the surface of the cobalt iron boron metal layer, forming protective layer. The metal cobalt iron boron is alloy target material. USE - Preparing graphene-doped fully flexible magneto-electric heterojunction. ADVANTAGE - The graphene-doped fully flexible magneto-electric heterojunction is prepared by simple process. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a graphene-doped fully flexible magneto-electric heterojunction. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating the method for preparing graphene-doped fully flexible magneto-electric heterojunction (Drawing includes non-English language text).