▎ 摘　　要

NOVELTY - Formation of graphene layer on substrate involves forming a carbon source layer which is convertible into a graphene layer on the substrate, forming a metal catalyst layer on the carbon source layer, converting the carbon source layers into the graphene layer by heating primary part of the substrate in which carbon source layers and metal catalyst layers are formed using local heating source, converting the carbon source layers into the graphene by moving the local heating source and then heating secondary part which is different from the primary part and removing metal catalyst layer. USE - Formation of graphene layer on substrate used for semiconductor device (all claimed). ADVANTAGE - The method enables formation of high-quality graphene layer. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view explaining the formation of graphene layer on substrate.