• 专利标题:   Graphene/silicon solar battery has back electrode, P-type silicon layer, n-type silicon layer, n-type doped graphene-containing layer and front electrode which are formed in order from bottom surface to top surface.
  • 专利号:   CN203312307-U
  • 发明人:   LIN S, LI X
  • 专利权人:   HANGZHOU GELANFENG NANO TECHNOLOGY CO LT
  • 国际专利分类:   H01L031/0216, H01L031/0224, H01L031/068
  • 专利详细信息:   CN203312307-U 27 Nov 2013 H01L-031/0216 201406 Pages: 6 Chinese
  • 申请详细信息:   CN203312307-U CN20358484 21 Jun 2013
  • 优先权号:   CN20358484

▎ 摘  要

NOVELTY - The utility model claims a graphite/silicon solar cell, the graphite/silicon solar cell from bottom to top in turn provided with the back electrode, a p-type silicon layer, an n-type silicon layer, an n-type doped graphene-containing layer and a front electrode, graphene oxide doped carrier concentration of not less than 1012 cm 2. A manufacturing comprises the following steps: taking p-type silicon sheet into a chemical etching solution so that the surface structure is formed, and then the etching of a via a diffusion or ion implantation for forming an n-type phosphorus-doped silicon layer, and then the n-type doped graphene is transferred to a doped n-type silicon layer, to make a back electrode on the p-type silicon layer, to make a front electrode on the n-type doped. This utility model of the graphene/silicon solar cell using graphene material can improve the open-circuit voltage of the solar battery, and can reduce the series resistance of the solar cell and improve the output power.