▎ 摘　　要

NOVELTY - The transistor has a gate including a graphene sheet (18) for receiving incident electromagnetic radiation (24) that impinges on the sheet, where incident radiation freeing electrons in graphene is due to a zero bandgap. An electrical field (26) is in electrical communication with the sheet to prevent the electrons from recombining with the sheet, where the sheet is formed with a decreasing taper width from a maximum width (w-2) distal to a discharging element (16) to a minimum width (w-1) proximate to the element to allow the electrons to move towards the element. USE - Transistor e.g. FET and MOSFET, for use as an antenna (claimed) i.e. graphene-based quantum detector device to convert quanta of electromagnetic radiation over a wide frequency range into a proportional electrical signal. ADVANTAGE - The transistor converts electromagnetic radiation quanta into an electrical signal, which results in an antenna to be sized independently of a design frequency range when the transistor is used as the antenna, thus reducing manufacturing cost of the transistor. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for achieving a transistor effect in a pixel from incident electromagnetic radiation. DESCRIPTION OF DRAWING(S) - The drawing shows a side elevational view of a graphene-based quantum detector device. Minimum width (w-1) Maximum width (w-2) Discharging element (16) Graphene sheet (18) Incident electromagnetic radiation (24) Electrical field (26)