▎ 摘　　要

NOVELTY - Preparation of bent graphite structure-inserted carbon fluoride film involves cleaning inert substrate, placing inert substrate in a vacuum chamber, mixing hydrocarbon source gas with fluorine carbon source gas, introducing into a process chamber, ionizing and decomposing the hydrocarbon source gas and the fluorine carbon source gas, forming a graphene layer on the substrate and forming a protective layer on the graphene layer, bending the substrate for many times, and removing the substrate and the protective layer are removed to obtain a carbon fluoride film. USE - Preparation of bent graphite structure-inserted carbon fluoride film used as low dielectric constant material in integrated circuit. ADVANTAGE - The preparation method is economical and easy, and utilizes the characteristics of bent structure of graphite to conduct heat in the longitudinal direction to prepare carbon fluoride film with relative thermal stability, excellent uniformity and repeatability, and low pollution.