▎ 摘　　要

NOVELTY - The method involves providing structure (10) having copper structure (28') in opening of dielectric material (12). The copper structure is provided with uppermost surface coplanar with uppermost surface of dielectric material. A graphene cap (24') is formed directly on uppermost surface of copper structure by selective deposition process with selection and usage of carbon source for growing of graphene layer. The graphene cap is provided with edges vertically coincident with edges of copper structure. A metal-containing cap is formed directly on uppermost surface of copper structure. USE - Method for forming interconnect structure for integrated microelectronic circuit. ADVANTAGE - Since the graphene cap is formed directly on uppermost surface of copper structure, the interconnect structure having electromigration (EM) resistance can be achieved efficiently. Hence, the problem of cross-sectional wiring dimensions shrinking can be avoided. DESCRIPTION OF DRAWING(S) - The drawing shows a cross sectional view of the structure after forming dielectric material portions adjacent to the grapheme capped copper structure. Structure (10) Dielectric material (12) First diffusion barrier material (18') Graphene cap (24') Copper structure (28')