▎ 摘　　要

NOVELTY - The semiconductor structure (200) has a TEC mask (230) formed from the group consisting of carbon nanostructures and graphene, which is positioned upon a substrate (220). An ELOG material (210) is positioned upon the TEC mask that comprises a trench and several dimples. The TEC mask is composed of low density TEC mask and high density mask. An ELOG material contains a vertically extending section that extends from the trench. USE - Semiconductor structure of semiconductor apparatus such as semiconductor laser, transistor, photodetector, optical amplifier, optical waveguide and optical modulator (all claimed). ADVANTAGE - Additional defects of the ELOG material are prevented as the TEC mask is composed of relatively high density carbon nanostructures and graphene that are capable of conducting current and heat at higher levels and withstand high temperatures. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional side view of the semiconductor structure. Semiconductor structure (200) ELOG material (210) Wing (214) Substrate (220) TEC mask (230)