• 专利标题:   Single-layer graphene sheet used for chemical sensor comprises deficiency defect and/or reconstruction structure defect of carbon and enolate coupling structure, epoxy bond structure and/or ether bond structure formed in the defect.
  • 专利号:   JP2021195272-A
  • 发明人:   KATO R, HASEGAWA M
  • 专利权人:   NAT INST ADVANCED IND SCI TECHNOLOGY
  • 国际专利分类:   C01B032/194, H01B001/04, H01L041/113
  • 专利详细信息:   JP2021195272-A 27 Dec 2021 C01B-032/194 202212 Pages: 15 Japanese
  • 申请详细信息:   JP2021195272-A JP102013 12 Jun 2020
  • 优先权号:   JP102013

▎ 摘  要

NOVELTY - A single-layer graphene sheet comprises deficiency defect and/or reconstruction structure defect of carbon and enolate coupling structure, epoxy bond structure and/or ether bond structure formed in the defect, and sheet resistance of less than or equal to 700 Omega /square. The ratio ID/IG of the strength of D-band to the strength of G-band in the Raman spectrum of 0.2. USE - A single-layer graphene sheet used for chemical sensor (claimed). ADVANTAGE - The single-layer graphene sheet has a large number of defects and maintains excellent conductivity. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for treating the single-layer graphene sheet monolayer which involves preparing graphene sheet, irradiating single-layer graphene sheet with UV rays in oxygen gas or argon-oxygen mixed gas; and forming carbon deficiency defect and/or construction structural defect, and enolate coupling structure, epoxy bond structure and/or epoxy bond structure, and/or epoxy bond structure and/or oxygen gas mixture in the defect and/or forming ether bond structure.