▎ 摘　　要

NOVELTY - Interconnect structure comprises: at least one opening in a dielectric layer; a graphene-based barrier metal layer (106) disposed on the dielectric layer; a seed layer disposed on the graphene-based barrier metal layer; an electroplated copper layer disposed on the seed layer; a planarized surface, where a portion of the graphene-based barrier metal layer, the seed layer and the electroplated copper layer are removed; and a capping layer disposed on the planarized surface. USE - Used as interconnect structure. ADVANTAGE - The interconnect structure comprises a graphene-based barrier metal layer which blocks oxygen intrusion from a dielectric layer into the interconnect structure and blocks copper diffusion from the interconnect structure into the dielectric layer, thus improving integrated circuit performance, enhancing electromigration reliability of the interconnect structure, minimizing sudden data loss, and enhancing the useful lifetime of semiconductor integrated circuit products. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for fabricating the interconnect structure, comprising forming the opening in the dielectric layer, forming the graphene-based barrier metal layer disposed on dielectric layer, forming the seed layer on the graphene-based barrier metal layer, forming the electroplated copper layer on the seed layer, forming the planarized surface, and forming the capping layer disposed on the planarized surface. DESCRIPTION OF DRAWING(S) - The figure shows a cross-sectional view illustrating the formation of the trench areas and via holes having a barrier metal layer, a seed layer and an electroplated copper layer, where a dielectric capping layer is formed. Substrate (102) Transistor area layer (104) First dielectric layer (105) Barrier metal layer (106) First metal layer (107)