▎ 摘　　要

NOVELTY - Spin orbit logic (SOL) device comprises a first electrically conductive layer, a layer comprising a ferroelectric material (FE layer) (212) on the first electrically conductive layer, a second electrically conductive layer on the FE layer, and a spin orbit coupling (SOC) stack including a first layer (SOC1 layer) (214) including a first SOC material, and a second layer (SOC2 layer) including a second SOC material, the SOC1 layer adjacent the FE layer. USE - Spin orbit logic device used in integrated circuit structure and integrated circuit device assembly (all claimed). ADVANTAGE - The spin orbit logic device operates faster than a ferromagnetically switched spin orbit logic device, and is further simpler and less expensive to manufacture. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: 1. an integrated circuit structure, which comprises: a multiple spin orbit logic (SOL) devices; and 2. an integrated circuit device assembly, which comprises: a printed circuit board, and an integrated circuit components attached to the printed circuit board, individual ones of the integrated circuit components including one or more integrated circuit dies, individual ones of the dies including spin orbit logic (SOL) devices. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of an electric spin orbit logic (ESOL) inverter device. 201FE capacitor 210Negative electrode layer 212Ferroelectric (FE) material (FE layer) 214Spin orbit coupling (SOC) material (SOC1 layer) 215Tunnel barrier (TB layer)