• 专利标题:   Formation of diode for electronic application, involves providing graphene layer structures on substrates, treating structures with oxidant to form graphene oxide surface, and aligning structure against graphene oxide surface of structure.
  • 专利号:   GB2588767-A, WO2021089488-A1, GB2588767-B, CN114616653-A, KR2022097464-A, DE112020005470-T5, JP2023501320-W
  • 发明人:   WALLIS R, WALLACE R
  • 专利权人:   PARAGRAF LTD
  • 国际专利分类:   C01B032/182, H01L029/15, H01L029/861, C01B032/194, H01L029/86, H01L029/66, H01L021/329, H01L029/16, H01L029/88, H01L029/161, C01B032/186, C01B032/198
  • 专利详细信息:   GB2588767-A 12 May 2021 H01L-029/861 202147 English
  • 申请详细信息:   GB2588767-A GB015993 04 Nov 2019
  • 优先权号:   GB015993, CN80075655, KR718832

▎ 摘  要

NOVELTY - Formation of diode involves providing a graphene layer structure (5) on a substrate (10), providing a graphene layer structure (15) on a substrate (25), treating the structure (5) with an oxidant to form a graphene oxide surface (20), and aligning the structure (15) against the graphene oxide surface of the structure (5). USE - Formation of diode (claimed) used for electronic application e.g. wearable and flexible electronics, photovoltaic applications e.g. solar cell, and display application. ADVANTAGE - The method is easy and simple, and enables formation of diode with high quality and having excellent rectification ratio, without using harmful chemicals, and eliminates the graphene transfer processes which allows for easy scale up production. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the graphene/graphene oxide diode. Diode (1) Graphene layer structures (5,15) Substrates (10,25) Graphene oxide surface (20) Electrical contact (30) Electrical trace (35) Polymer coating (40)