▎ 摘　　要

NOVELTY - Reference electrode comprises a reference electrode layer; and a reference layer provided over a portion of the reference electrode layer (308) and defining a sample receiving region which is separated from the reference electrode layer by the reference layer, where the reference layer comprises fluorinated or silanized graphene and/or fluorinated or silanized graphene oxide. USE - Reference electrode used in sensing assembly for sensing a property of a sample (claimed). ADVANTAGE - The reference electrode is providing a reference potential during measurement of a property of a sample, it has improved the performance and stability, it has provided a sensitive detection mechanism, and it can provide a stable reference value across varying temperature and pH ranges (e.g. pH of 4-9) associated with the isothermal amplification processes. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: (1) a sensing assembly (300), which comprises a Field effect transistor (FET) (310) and the reference electrode (301), where the reference electrode is provided adjacent to or on the FET; (2) a system for sensing a property of a sample, which comprises a sensing assembly; a signal processing portion configured to process the first signal and the reference signal received from the sensing assembly; and a property determination portion configured to, based in portion on the first signal and the reference signal processed from the sensing assembly, determine a property of the sample; and (3) a method for manufacturing a reference electrode, which involves providing a reference layer comprises modified graphene and/or graphene oxide, where providing the reference layer comprises modifying graphene and/or graphene oxide to reduce a surface energy of the graphene and/or graphene oxide; and providing a reference electrode layer, where the reference layer is arranged over a portion of the reference electrode layer and defines a sample receiving region which is separated from the reference electrode layer by the reference layer. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic side view of a sensing assembly. 300Sensing assembly 301Reference electrode 308Reference electrode layer 310Field effect transistor 320First layer