▎ 摘　　要

NOVELTY - Photodiode comprises a silicon quantum dot layer (110) containing silicon quantum dots (111) formed on a silicon oxide thin film, a graphene-silicon quantum dot hybrid structure made of doped graphene (120) and formed on the silicon quantum dot layer, and an electrode (140) formed on the upper and lower portions of the hybrid structure. The size, optical and electrical properties of the silicon quantum dots are controlled depending on the doping concentration of the doped graphene. USE - The photodiode is useful in optoelectronic device. ADVANTAGE - The photodiode adjusts impact energy, has wide detection range to the near infrared light and optimized performance by controlling the Fermi energy level of graphene, can be easily manufactured, and controls energy band gap and size of silicon quantum dots. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for manufacturing photodiode, comprising (a) forming the silicon quantum dot layer containing silicon quantum dots on the silicon oxide thin film which is arranged on a substrate (150), (b) forming the hybrid structure by forming doped graphene on the silicon quantum dot layer, and (c) forming the electrode on the lower portion of the substrate formed with the silicon quantum dot layer and upper portion of the hybrid structure. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic representation of the photodiode. Silicon quantum dot layer (110) Silicon quantum dots (111) Doped graphene (120) Electrode (140) Substrate (150)