• 专利标题:   Semiconductor packaging structure, has chip including thermal interface material that is provided with graphene layer and two low-melting point metal layers, where graphene-layer is up and down arranged on substrate.
  • 专利号:   CN102867793-A
  • 发明人:   GAO J, LI B, YANG J, CAI Z
  • 专利权人:   ASE GROUP
  • 国际专利分类:   B32B015/04, H01L023/373
  • 专利详细信息:   CN102867793-A 09 Jan 2013 H01L-023/373 201326 Pages: 7 Chinese
  • 申请详细信息:   CN102867793-A CN10288651 14 Aug 2012
  • 优先权号:   CN10288651

▎ 摘  要

NOVELTY - The structure has a chip set on a substrate, and a radiating fin is set on the chip. The chip comprises a thermal interface material and a heat radiating plate, where the thermal interface material comprises a graphene layer and two low-melting point metal layers. The graphene-containing layer is up and down arranged on the substrate. A melting point of the low-melting point metal layers is ranged between 150 to 230 degrees centigrade. The substrate comprises a radiating ring that surrounds the chip. USE - Semiconductor packaging structure. ADVANTAGE - The structure is designed such that the chip and radiating fin has high heat conducting efficiency. The structure low manufacturing cost. DESCRIPTION OF DRAWING(S) - The drawing shows a cross sectional view of a semiconductor packaging structure.