▎ 摘 要
NOVELTY - Preparing graphene-doped trapezoidal-clad MZI type optical waveguide hybrid integrated thermo-optic switch comprises e.g. (i) cleaning substrate, (ii) spin-coating a photosensitive polymer core layer material on the surface of the silicon dioxide layer, (iii) spin coating polymer cladding material on MZI optical waveguide core layer at high speed, (iv) vacuum-depositing an aluminum electrode film, and spin-coating photoresist on the aluminum electrode film and (v) cutting and cleaving perpendicular to the direction of the optical waveguide. USE - The method is useful for preparing graphene-doped trapezoidal-clad MZI type optical waveguide hybrid integrated thermo-optic switch. ADVANTAGE - The thermo-optic switch consumes less power and less switching time, has good preparation accuracy and is simple to process. DETAILED DESCRIPTION - Preparing graphene-doped trapezoidal-clad MZI type optical waveguide hybrid integrated thermo-optic switch comprises (i) using silicon-based silicon dioxide as the substrate, first cleaning the substrate with an acetone solution to remove organic impurities on the surface of the substrate, washing the substrate with an ethanol solution to remove the residual acetone solution, washing the substrate repeatedly with deionized water, removing ethanol solution on the substrate surface, and blowing off deionized water on the substrate surface, (ii) spin-coating a photosensitive polymer core layer material on the surface of the silicon dioxide layer, the rotation speed of the spin coating is 2000-5000 revolutions/minute and the spin coating time is 20-60 seconds, pre-baking on a constant temperature platform at 60-90 degrees C for 30-60 minutes, obtaining a photosensitive polymer core film having a thickness of 1-100 mu m on the surface of the silicon dioxide layer after being baked, and UV exposure of the core film by using the same or complementary lithographic mask as the structure of the MZI-type optical waveguide to be prepared, the exposure intensity is 20-200 mW/cm2, the exposure time is 4-300 seconds and the exposure wavelength is 360-370 nm, performing post-exposure on a constant temperature platform after exposure at 60-90 degrees C for 30-60 minutes, placing in a developing solution for development, removing the exposed or unexposed core layer film by wet etching, and rinsing with deionized water, hardening the remaining core film at 60-150 degrees C for 30-60 minutes, finally, cooling to room temperature to obtain rectangular MZI-type optical waveguide core layer on the substrate with a core layer width of 3-10 mu m and a height of 2-10 mu m, (iii) spin coating polymer cladding material on MZI optical waveguide core layer at high speed, spin coating speed is 2000-10000 revolutions/minute for 20-60 seconds, curing on a constant temperature platform at 100-140 degrees C for 10-120 minutes, a polymer upper cladding layer having a thickness h1 of 0.5-3 mu m and a thickness h2 of 1-8 mu m to form a trapezoid after curing, H1 is the thickness of the polymer cladding layer at the position directly above the MZI-type optical waveguide core layer and h2 is the thickness of the polymer cladding layer at both sides of the MZI-type optical waveguide core layer, (iv) vacuum-depositing an aluminum electrode film having a thickness of 20 -200 nm on the polymer upper cladding layer, spin-coating photoresist on the aluminum electrode film, the pre-uniform rotation speed is 300-600 revolutions/minute for 4-6 seconds, and spin coating with a rotational speed 2000-5000 revolutions/minute for 20-60 seconds, placing on a constant temperature platform for curing at 60-90 degrees C for 30-60 minutes to obtain photoresist film on the aluminum electrode film, exposing the photoresist film using an electrode mask to obtain an aluminum electrode, where the electrode mask is a three-stage structure, which is composed of an heating area, an input and output area, and a metal heating electrode pin area, there are two input and output areas and metal heating electrode pin areas, and the metal heating electrode pin areas are respectively referred to as the first metal heating electrode pin area and the second metal heating electrode pin area, the input and output areas are perpendicular to the heating area, and the input area, the first metal heating electrode pin area, the heating area, the second metal heating electrode pin area, and the output area are connected in sequence, the input and output areas are on the same side of the heating area, the length L1 of the heating area is 1 to 3 cm and the width W1 is 10-50 mu m, the input and output areas have a length L2 of 50-200 mu m and a width W2 of 0.3-1 cm, the length L3 of the lead region of the metal heating electrode is 2000-5000 mu m, and the width W3 is 500-1500 mu m, and (v) cutting and cleaving perpendicular to the direction of the optical waveguide. An INDEPENDENT CLAIM is also included for graphene-doped trapezoid clad MZI optical waveguide hybrid integrated thermo-optic switch prepared by the above method.