• 专利标题:   Method for preparing silicon quantum point cathode material of graphite support, involves preparing graphene oxide supported silicon quantum dots by heat treatment to restore graphene oxide.
  • 专利号:   CN105633386-A, CN105633386-B
  • 发明人:   LI X, WANG B, ZHI L
  • 专利权人:   NAT CENT NANOSCIENCE TECHNOLOGY CHINA, NAT CENT NANOSCIENCE TECHNOLOGY CHINA
  • 国际专利分类:   B82Y030/00, H01M004/38, H01M004/62
  • 专利详细信息:   CN105633386-A 01 Jun 2016 H01M-004/38 201645 Pages: 9 Chinese
  • 申请详细信息:   CN105633386-A CN10612312 04 Nov 2014
  • 优先权号:   CN10612312

▎ 摘  要

NOVELTY - The method involves synthesizing the silicon quantum dots of 1-30nm by the method of the organic silicon precursor and the size of the uniform size by the solvent thermal method. The silicon quantum dots supported by graphene oxide are prepared through the non covalent self-assembly method to realize the high homogeneity of the silicon quantum dots on the graphene oxide. The graphene oxide supported silicon quantum dots are prepared by heat treatment to restore the graphene oxide. The mixture is placed for 0.5-12 hours to obtain height uniform size of 1-30nm. USE - Method for preparing silicon quantum point cathode material of graphite support. ADVANTAGE - The cost of invention is low, and the technique is simple and controllable. The power consumption is low. The performance is high, and circulation is very stable. DESCRIPTION OF DRAWING(S) - The drawing shows the photographic view of the method for preparing silicon quantum point cathode material of graphite support.