▎ 摘　　要

NOVELTY - The optoelectronic device (100) has a stacked anode (10), a light-emitting layer (30), an electron transport layer (50) and a cathode (20). A thermoelectric material layer (40) is also arranged between the light-emitting layer and the electron transport layer. The material of the thermoelectric material layer includes thermoelectric materials. USE - Photoelectric device for use in display device. ADVANTAGE - When the thermoelectric material layer is applied to the optoelectronic device, it can reduce the leakage current and inhibit the exciton quenching caused by the carrier transmission layer, avoids the damage of the optoelectronic device caused by the temperature rise to improve the performance of the optoelectronic device. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for preparing the optoelectronic device, which involves: providing an anode, preparing a light-emitting layer on the anode, then preparing a thermoelectric material layer on the light-emitting layer, preparing an electron transport layer on the thermoelectric material layer, and preparing a cathode on the electron transport layer to obtain a photoelectric device, or providing a cathode, preparing an electron transport layer on the cathode, then preparing a thermoelectric material layer on the electron transport layer, preparing a light-emitting layer on the thermoelectric material layer, and then preparing an anode on the light-emitting layer to obtain a photoelectric device, where the preparation of the thermoelectric material layer includes providing a solution containing the thermoelectric material, and disposing the solution containing the thermoelectric material on the light emitting layer or the electron transport layer. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the optoelectronic device. 10Anode 20Cathode 30Light emitting layer 40Thermoelectric material layer 50Electron transport layer 100Optoelectronic device