▎ 摘　　要

NOVELTY - The method involves using metal-organic chemical vapor deposition method to sequentially buffer layers on a sapphire substrate, N-type gallium nitride layer and a quantum well layer sequentially on the substrate, using a chemical vapor phase preparation method to prepare a first graphene layer on the quantum well layers, using an electron beam vacuum evaporation method to evaporate the aluminum layer on a graphene layer to perform high-temperature annealing treatment on the aluminum film on the graphene layer by using a fast annealed furnace, making an aluminum film ball, forming uniformly distributed spherical aluminum nanoparticles on the surface of the first graphene, filling the gap between the aluminum nano particles, preparing a second graphene layer on the polymethyl methacrylate layer by a chemical vapor deposition method, and growing a P-type gallium nitride layer to a complete structure on the second graphene layer by using metal organic chemical vapor deposition method. USE - Manufacturing method for improving brightness of chip LED used as semiconductor electronic device for converting electric energy into light energy. Uses include but are not limited to mobile phone, TV backlight display and sterilizing. ADVANTAGE - The method improves the brightness of the chip LED that is capable of promoting radiation composite process of electron and hole, effectively improves the luminous efficiency and luminous LED of chip, and improves the optical performance of the LED. DESCRIPTION OF DRAWING(S) - The drawing shows a structure diagram of a light emitting diode. 1Sapphire substrate 2Buffer layer 3N-type gallium nitride layer 4Quantum well layer 5First graphene layer 7Aluminum nano-particle 8Polymethyl methacrylate layer 9Second graphene layer 10P-type gallium nitride layer