▎ 摘　　要

NOVELTY - The resonator has a resonator unit provided with a substrate (101), a first graphene thin layer (102), an insulating layer (103), a bottom electrode (104), a piezoelectric thin film (105), a top electrode (106) and a second graphene thin layer (107). The substrate etches a substrate etching groove such that the first and second graphene thin layers are connected with a radiating layer. The piezolectric thin film is excited by a bulk acoustic wave is limited between the top and the bottom electrodes to realize resonator function. The piezoelectric thin film is located between the bottom electrode and the top electrode such that the top electrode, the piezoelectric thin film and the bottom electrode form a sandwich structure. USE - High-heat dissipation thin FBAR for use in fifth generation (5G) communication field. ADVANTAGE - The resonator has simple structure, and small influence to the core structure of manufacturing process, and reduces manufacturing cost of a FBAR device, and can prepare the FBAR device with high efficiency radiating performance. The resonator improves heat conducting performance, and controlls frequency deviation. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a high-heat dissipation thin film bulk acoustic resonator (FBAR) preparation method. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a high-heat dissipation thin FBAR. Substrate (101) First graphene thin layer (102) Insulating layer (103) Bottom electrode (104) Piezoelectric thin film (105) Top electrode (106) Second graphene thin layer (107)