▎ 摘　　要

NOVELTY - A photosensitive field-effect transistor comprises substrate layer, silicon dioxide layer, graphene layer, electrode layer comprising source electrode and drain electrode connected by conductive wire, in order, and channel comprising quantum dot layer provided in intermediate position of the electrode layer. USE - Photosensitive field-effect transistor (claimed). ADVANTAGE - The photosensitive field-effect transistor having excellent stability and high-responsive with respect to infrared light, is manufactured by economical process. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for preparation of photosensitive field-effect transistor.