▎ 摘　　要

NOVELTY - The direct growing method involves growing a layer of graphene film on the metal surface using metal catalysis through a chemical vapor deposition method. A continuous growing is performed on the metal agglomeration formed holes and the graphene film hole will fall on the substrate. A layer of PMMA film is spin coated as an etching support layer after finishing growth. Etching of the metal film and the PMMA film allows the graphene fall on the substrate of insulation before using an organic solvent to remove the PMMA film, realizing the insulating substrate directly grown with graphene. USE - Direct growing method for large area graphene on oxide insulating substrate. ADVANTAGE - The direct growing method is simple, highly repeatable and can produce high quality grown graphene on large area with almost no damage. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of the metal substrate growing graphene prepared by transferring graphene device. (Drawing includes non-English language text).