▎ 摘　　要

NOVELTY - The method involves epitaxially growing an epitaxial functional layer on a first growth substrate, and providing a first transfer substrate. An upper surface of the epitaxial function layer is attached to the first transfer substrate. The epitaxial function layer and the first growth substrate are cut to form multiple spaced micro LED units (201). A through hole is formed at the bottom of second groove, and the through hole is set to penetrate a target substrate (400). First metal layer, first graphene layer, and second stress are formed in the through hole in sequence. Multiple micro LED units on the second transfer substrate are transferred to the corresponding second grooves in the target substrate, and the second transfer substrate is removed. An encapsulation layer (500) is formed to cover the target substrate and micro LED units. USE - Transfer method of micro LED unit used in micro LED display panel (claimed). ADVANTAGE - The method enables transferring the micro-light emitting diode units to the groove of the second transfer substrate to the corresponding second groove in the target substrate, thus effectively improving the transfer precision. The second groove is respectively with the first and second stress buffer layer, so as to ensure the micro LED unit transfer process in the first groove, thus avoiding micro LED units damage, and hence improving the yield of the transfer chip. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view showing the structure of epitaxial functional layer on first growth substrate. Micro LED unit (201) Target substrate (400) Encapsulation layer (500)