▎ 摘　　要

NOVELTY - Bismuth selenide superlattice structure is a multilayer film structure in which bismuth selenide (Bi2Se3) thin films and indium bismuth selenide ((Bi1-xInx)2Se3) solid solution films are alternately stacked. The film structure of the bismuth selenide superlattice structure is represented by linear formula. USE - Bismuth selenide superlattice structure is used in topological insulator and thermoelectric material. ADVANTAGE - The bismuth selenide superlattice structure has small lattice mismatch between bismuth selenide topology insulator layer and common insulator layer, better structure stability, and lower volume electron concentration. DETAILED DESCRIPTION - Bismuth selenide superlattice structure is a multilayer film structure in which bismuth selenide (Bi2Se3) thin films and indium bismuth selenide ((Bi1-xInx)2Se3) solid solution films are alternately stacked. The film structure of the bismuth selenide superlattice structure is represented by linear formula of (Bi2Se3)nN/((Bi1-xInx)2Se3)mN, where units are stacked in sequence, N is 1-1000, nN is the Nth, and in the unit of Bi2Se3 along the (001) crystal orientation, every five monoatomic layers (repetition order: -Se-Bi-Se-Bi-Se-) is used as the number of units in a thickness unit, nN is 1-100 and mN is the Nth, and in the unit (Bi1-xInx)2Se3 along the (001) crystal orientation, every five monoatomic layers (repetition order: -Se-Bi(In)-Se-Bi(In)-Se-) is used as a thickness unit number of units, mN is 1-100, and x is the atomic percentage content of in doping atoms in the (Bi1-xInx)2Se3 solid solution film, expressed by pure decimals. An INDEPENDENT CLAIM is included for a method for preparing a bismuth selenide superlattice structure, which involves cleaning and drying the substrate material, and passing it into the molecular beam epitaxy system, and heating the substrate to the growth temperature and keeping unchanged, and adding the bismuth source, indium source, and heating the selenium source to the equivalent beam pressure (BEP) respectively, and growing Bi2Se3 single crystal film and (Bi1 xInx)2Se3 solid solution single crystal film in each unit in sequence to the required nN, mN and N values, and after the growth is completed, cooling the substrate to room temperature to obtain the bismuth selenide superlattice structure.