▎ 摘　　要

NOVELTY - The method involves forming gate oxide (450) on a conductive substrate (410). A bi-layered metal layer (422) is formed on the gate oxide. A graphene layer (430) is formed on the metal layer. A metal protection layer is formed on the graphene layer. The metal protection layer, the graphene layer and the metal layer are sequentially patterned using a first photoresist pattern. The graphene layer is exposed in a channel formation region by wet etching the metal protection layer and the metal layer using a second photoresist pattern. USE - Method for fabricating a graphene electronic device i.e. FET (claimed), of a high speed operating device i.e. radio frequency (RF) device. ADVANTAGE - The method enables avoiding damage of the graphene channel layer during transferring process and damage to the substrate due to high temperature since graphene is grown at relatively low temperature. The method enables forming the graphene channel layer by wet etching graphene after forming the metal protection layer on the graphene, so that contact of photoresist with the graphene can be prevented or impeded by the metal protection layer, thus preventing or impeding loss of inherent characteristics of the graphene. DETAILED DESCRIPTION - The metal layer is configured to function as a catalyst layer. The conductive substrate is configured to function as a gate electrode (460). DESCRIPTION OF DRAWING(S) - The drawing shows a cross sectional view of a structure of a graphene electronic device. Conductive substrate (410) Bi-layered metal layer (422) Graphene layer (430) Gate oxide (450) Gate electrode (460)