▎ 摘　　要

NOVELTY - Hybrid bonding structure comprises a solder ball, and a solder paste bonded to solder ball, where the solder paste comprises a transient liquid phase, the transient liquid phase comprises a core and a housing on a surface of the core, the melting point of housing is lower than a melting point of the core, and the core and housing are configured to form an intermetallic compound in response to the transient liquid phase at least partially being at a temperature of 20-190 degrees C. USE - The hybrid bonding structure is useful in a semiconductor device, which is used in electronic device (claimed), preferably memory semiconductor package or module used in data server, mobile or laptop computer. ADVANTAGE - The hybrid bonding structure is configured to bond at a low temperature. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) a solder paste composition comprising a core, and a housing on a surface of the core, where the melting point of housing is lower than a melting point of core, the core and housing are configured to form an intermetallic compound in response to solder paste composition at least partially being at a temperature of 20-190 degrees C; (2) a semiconductor device comprising a circuit board, a semiconductor chip, and the hybrid bonding structure between circuit board and semiconductor chip; and (3) a method of manufacturing the semiconductor device, involving forming semiconductor chip, arranging solder ball on the semiconductor chip, applying solder paste to circuit board, where the solder paste comprises a flux and a transient liquid phase, the transient liquid phase comprises core and housing, positioning the solder ball to face the solder paste, melting the housing at 20-190 degrees C to form intermetallic compound between housing and core, and bonding the semiconductor chip to circuit board.