• 专利标题:   Preparing low-defect nitrogen-doped graphene by pre-nitriding graphite by heat treatment in nitrogen-containing active atmosphere, stripping pre-nitrided graphite by chemical oxidation to obtain nitrogen-doped graphene oxide, and pyrolyzing.
  • 专利号:   CN111422859-A
  • 发明人:   KANG Y, ZHANG Q, CAO Y, HE X, LI Z, XU K, BI J
  • 专利权人:   UNIV QUJING NORMAL
  • 国际专利分类:   C01B032/19
  • 专利详细信息:   CN111422859-A 17 Jul 2020 C01B-032/19 202065 Pages: 12 Chinese
  • 申请详细信息:   CN111422859-A CN10332803 24 Apr 2020
  • 优先权号:   CN10332803

▎ 摘  要

NOVELTY - Method for preparing low-defect nitrogen-doped graphene involves (a) pre-nitriding graphite raw material by heat treatment in a nitrogen-containing active atmosphere, (b) stripping the pre-nitrided graphite through chemical oxidation to obtain nitrogen-doped graphene oxide, and (c) pyrolyzing and reducing the nitrogen-doped graphene oxide to obtain the product. USE - The method is useful for preparing low-defect nitrogen-doped graphene. ADVANTAGE - The method controls type and quantity of nitrogen atom doping, is simple in operation, and realizes large-scale production. The nitrogen-doped graphene has fewer defects and high quality.