▎ 摘　　要

NOVELTY - The photosensing device has graphene-semiconductor heterojunctions, each having a graphene layer, and a semiconductor layer. The graphene layer is disposed on top of the substrate and the semiconductor layer is disposed on top of the graphene layer. Each of photovoltage sensing mechanisms is coupled to corresponding graphene-semiconductor heterojunctions. USE - Photosensing device for use in photosensing module (claimed). ADVANTAGE - Effectively reduces the total photo-sensing area and reduces photo responsivity and corresponding dynamic range. Eliminates the limit of fill factor because the photodiode is not located in the same plane with the complementary metal oxide semiconductor (CMOS) circuits. Ensures that straightforward implementation of the graphene-semiconductor heterojunction on semiconductor substrates may be realized, detrimental effects can be eliminated while maintaining the performance of CMOS image sensor by implementing graphene-semiconductor heterojunction on top of the CMOS integrated circuit (IC) chip. DESCRIPTION OF DRAWING(S) - The drawing shows the block diagram of a system using the photosensing device. Photosensing module (100) Display screen (201) Storage unit (202) Controller (203) Input module (204)