▎ 摘　　要

NOVELTY - Preparing large-area regular epitaxial graphene doped with metal atoms comprises e.g. (i) taking monocrystal silicon carbide substrate as growth substrate for the epitaxial graphene, (ii) heating the monocrystal silicon carbide sample in a vacuum preparation chamber to 530-570 degrees C, degassing, and removing absorbed moisture and residue on the surface of monocrystal silicon carbide, (iii) heating the metal source in the K-Cell device, and maintaining metal atom beam flow at 20-30 nA, and (iv) placing the degassed silicon carbide sample under metal beam source, and raising temperature. USE - The method is useful for preparing large-area regular epitaxial graphene doped with metal atoms (claimed). ADVANTAGE - The method: has simple technical idea and good operability; and is stable. DETAILED DESCRIPTION - Preparing large-area regular epitaxial graphene doped with metal atoms comprises (i) taking monocrystal silicon carbide substrate as growth substrate for the epitaxial graphene, (ii) heating the monocrystal silicon carbide sample in a vacuum preparation chamber to 530-570 degrees C, degassing, and removing absorbed moisture and residue on the surface of monocrystal silicon carbide, (iii) heating the metal source in the K-Cell device, and maintaining the metal atom beam flow at 20-30 nA, (iv) placing the degassed silicon carbide sample under the metal beam source, raising the temperature to 1100-1150 degrees C, heating, and annealing under the assisted metal beam to remove oxide on the surface to obtain the metal atom at terminal of sample surface, and (v) heating the silicon carbide sample to 1450 degrees C under the argon atmosphere, stop heating, heating after 2 minutes interval, carrying out the heating process for 3-5 times to obtain large-area regular epitaxial graphene doped with metal atoms.