• 专利标题:   Nitrogen-doped graphene silicon dioxide coaxial nanotube field-emission cathode has amorphous silicon dioxide layer coaxially coated on outer wall of graphene tube, to form graphene-based nanocomposite structure.
  • 专利号:   CN205645738-U
  • 发明人:   SONG G, LI Z, LI K
  • 专利权人:   UNIV QINGDAO SCI TECHNOLOGY
  • 国际专利分类:   B82Y030/00, C23C016/30, H01J001/304
  • 专利详细信息:   CN205645738-U 12 Oct 2016 H01J-001/304 201672 Pages: 8 Chinese
  • 申请详细信息:   CN205645738-U CN20255673 30 Mar 2016
  • 优先权号:   CN20255673

▎ 摘  要

NOVELTY - A nitrogen-doped graphene SiO2 coaxial nanotube field-emission cathode, nitrogen-doped graphene comprising a conductive substrate, grown on a substrate of @ SiO2 coaxial nano-tube. The solution provides the graphene doped with nitrogen @ SiO2 centre layer of the coaxial graphene nano-tube is nano-tube, its diameter is 150 to 250nm, the outer layer is a SiO2 coating, the thickness is 6 to 8nm, the nitrogen atom percentage content is 3.2at%. synergistic effect the structure comprehensively considers the one-dimensional tubular structure, the N element is doped with other material and composite factors for improving field emission performance of graphene, the graphene doped with nitrogen @ SiO2 coaxial nanotube field-emission cathode, exhibit excellent field emission performance, suitable for field emission flat panel displays, vacuum electronic devices, an electron source of a large screen LCD backlight module and field emission lighting source.